Nitride Semiconductor Materials and Devices
Overview
Program September 8th
19:00
Reception (at IISB foyer, 1st floor)
Dr. Saskia Schimmel, FAU Erlangen-Nürnberg
Prof. Hiroshi Amano, Nagoya University
Program September 9th
8:15 – 8:30
Registration (IISB entry area)
8:30 – 9:00
Welcome
Prof. Dr. Jörg Schulze, Head of Fraunhofer IISB and LEB
Dr. Mitsushi Suzuno, First Secretary / Science Attaché, Embassy of
Japan in Germany
Nitride Semiconductors for Sustainable Innovation
Chair: Prof. Dr. Oliver Ambacher, Universität Freiburg
9:00 – 9:45
The Role of Wide Bandgap and Ultrawide Bandgap
Semiconductors in Sustainable Innovation, Prof. Hiroshi Amano,
Nagoya University
Bulk Crystal Growth
Chair: Dr. Kazuki Ohnishi, Mie University
9:45 – 10:30
Status of the AlN Crystal Growth in Europe, Dr. Jochen Friedrich,
Fraunhofer IISB10:30 – 11:15
Group photo & Coffee break
11:15 – 12:00
Bulk GaN Crystal Growth Based on the Na-Flux Method, Dr.
Masayuki Imanishi, The University of Osaka12:00 – 12:45
Prospects and Challenges for Experimentally Validated Predictive
Models of Ammonothermal Crystal Growth, Dr. Saskia Schimmel,
FAU Erlangen-Nürnberg12:45 – 13:45
Lunch break
13:45 – 14:30
Lab tour
14:30 – 15:15
Bulk Growth of Heavily Oxygen-Doped GaN by Oxide Vapor Phase
Epitaxy and Its Applications, Dr. Shigeyoshi Usami, The University of
Osaka
Defect Characterization and Analysis I
Chair: Prof. Dr. Johannes Heitmann, TUBAF Freiberg
15:15 – 16:00
Investigation of Dislocations in Ammonothermal-grown GaN
Substrates by Synchrotron Radiation X-Ray Topography, Dr.
Kazuki Ohnishi, Mie University16:00 – 16:30
Coffee break
16:30 – 17:15
Luminescence Spectroscopy as a Probe of Point Defects in GaN:
From Ammonothermal Crystal Growth to Ion-Implantation Doping,
Dr. Kohei Shima, Tohoku University17:15 – 18:00
Surface Physics of III-N Thin Films, Prof. Dr. Stefan Krischok, TU
Ilmenau18:00 – 19:00
Travel to Gaststätte “Am Röthelheim”
19:00
Dinner at Gaststätte “Am Röthelheim”
Program September 10th
Defect Characterization and analysis II
Chair: Dr. Masayuki Imanishi, The University of Osaka
8:30 – 9:15
Insights into the Origin of Excess Donor-like Defects formed by Si-
Ion Implantation and subsequent Annealing in n-type GaN, Dr.
Hiroko Iguchi, Toyota Central R&D Labs. Inc.
Novel III-Nitride based Materials and Applications
Chair: Dr. Shigeyoshi Usami, The University of Osaka
9:15 – 10:00
Ferroelectric Wurtzites – From Advanced Material Characterization
to Applications, Dr. Niklas Wolff, CAU Kiel10:00 – 10:30
Coffee break
10:30 – 10:45
Introduction of JSPS Programs
10:45 – 11:30
Prospects of ferroelectric Cation-substituted AlN for Memory
Devices, Dr.-Ing. Roberto Guido, NamLab Dresden11:30 – 12:15
Structural and Piezoelectric Properties of Binary and Ternary Metal
Nitrides, Prof. Dr. Oliver Ambacher, Universität Freiburg12:15 – 13:15
Lunch break
13:15 – 13:30
Recent progress in GaN MOCVD Technology, Prof. Dr.-Ing. Michael
Heuken, Aixtron SE
III-Nitride based Devices
Chair: Prof. Hiroshi Amano, Nagoya University
13:30 – 14:15
A Game at the Atomic Scale for III-N Devices – from single defect
formation to atomic layer processing, Prof. Dr. Johannes Heitmann,
TUBAF Freiberg14:15 – 15:00
Deep-Ultraviolet Laser Diodes Based on AlGaN: From Material
Challenges to Device Operation, Dr. Maki Kushimoto, Nagoya
University15:00 – 15:30
Coffee break
15:30 – 16:15
Enabling Enhanced Optical Functionality by ternary MeScN
Compounds, Prof. Dr. Sangam Chatterjee, JLU Gießen16:15 – 17:30
Travel to Siemens Healthineers MedMuseum (Speakers and JSPS
only)17:30 – 18:30
Guided tour through the exhibition of Siemens Healthineers
MedMuseum (Speakers and JSPS only)18:30 – 19:00
Travel to Steinbach Bräu (Speakers and JSPS only)
19:00
Dinner at Steinbach Bräu (Speakers and JSPS only)
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